COMSOL Multiphysics simulations of planar MOSFET, 3D FinFET, and Gate-All-Around FET (GAAFET) with carrier concentration and electrical characteristic analysis.
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Updated
Aug 21, 2026
COMSOL Multiphysics simulations of planar MOSFET, 3D FinFET, and Gate-All-Around FET (GAAFET) with carrier concentration and electrical characteristic analysis.
CCD-in-CMOS TDI pixel — end-to-end Sentaurus TCAD device simulation (real process flow, full-well capacity, QE, three-phase clock wells). Portfolio project.
An undergraduate DEVSIM teaching project for MICS3090, covering 1D p+-on-n silicon solar-cell simulation, visualization, experimental-data processing, and parameter calibration.
Semiconductor device simulation (TCAD, drift-diffusion) as Abaqus user elements (UEL): Scharfetter-Gummel box method, pn diode + 3D MOSFET, verified vs Pao-Sah (1966) & Brews (1978) | 아바쿠스 UEL로 구현한 반도체 소자 시뮬레이션 (MOSFET, 드리프트-확산) — 심규장 Gyu-Jang Sim, SNU
250 nm MOSFET process design and device simulation in Silvaco TCAD.
Open 1-D drift-diffusion solver for perovskite solar cells: band-gap-coupled photoinduced halide segregation, J-V, hysteresis and impedance. Pure NumPy/SciPy.
A physics-aware Bayesian optimization engine that drives any TCAD simulator to automatically optimize semiconductor devices.
Physics-first 0D/1D materials simulator, validation-first: pn-diode drift-diffusion, PEMFC/SOFC fuel cells and electrochemistry, each pinned to a source-cited reproduction test. Ships an MCP server exposing 9 guarded tools so AI agents can drive it. DEVSIM cross-check optional.
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